EME publications 1999

1999

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Journal article

Bezakova E, Vianden R, Glover C, Ridgway M
Implantation-induced Amorphization of InP Characterised with perturbed Angular Correlation
Applied Physics Letters 75, 13(1999) 1923-1925

Chen Y, Williams J
Mechanochemical Reactions in the System FETiO3-Si
Journal of Materials Research 13, 12(1999) 3499-4503

Chen Y, Chadderton L, Fitzgerald J, Williams J
A solid-state process for formation of boron nitride nanotubes
Applied Physics Letters 74(1999) 2960-2962

Chen Y, Fitzgerald J, Chadderton L, Chaffron L
Nanoporous Carbon Produced by Ball Milling
Applied Physics Letters 74, 19(1999) 2782-2784

Chen Y, Fitzgerald J, Williams J, Bulcock S
Synthesis of boron nitride nanotubes at low temperatures using reactive ball milling
Chemical Physics Letters 299(3-4)(1999) 260-264

Chen Y, Williams J, Wang G, Campbell S
Increased Dissolution of Ilmenite Induced by High-Energy Ball Milling
Materials Science and Engineering A 271/1-2(1999) 485-490

Cheylan S, Manson N, Elliman R
The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2
Nuclear Instruments and Methods in Physics Research: Section B B148(1999) 986-990

Choi S, Elliman R
Negative Photoconductivity in SiO2 Films Containing Si Nanocrystals
Applied Physics Letters 74, 26(1999) 3987-3989

Choi S, Elliman R
Reversible Charging Effects in SiO2 Films Containing Si Nanocrystals
Applied Physics Letters 75, 7(1999) 968-970

Cohen M, Tan H, Jagadish C
Intermixing induced resonance shift in GaAs/AlxOy distributed Bragg resonators
Journal of Applied Physics 85(1999) 7964-7966

Deenapanray P, Petravic M
On the Migration Behaviour of Metal Impurities in Si During Secondary Ion Mass Spectrometry Profiling Using Low-Energy Oxygen Ions
Journal of Applied Physics 85, 8(1999) 3993-3998

Deenapanray P, Petravic M
Angular and Energy Dependence of the Ion Beam Oxidation of Si Using Oxygen Ions from a Duoplasmatron Source
Surface and Interface Analysis 27(1999) 92-97

Deenapanray P, Auret F, Myburg G
Electrical Characterization and Annealing Properties of Electrically Active Defects Introduced in n-Si During Sputter Etching in an Ar-plasma
Nuclear Instruments and Methods in Physics Research: Section B B148(1999) 300-305

Deenapanray P, Hillie K, Demangel C, Ridgway M
Atomic Force Microscopy and High-Resolution RBS Investigation of the Surface Modification of Magnetron Sputter-Etched Si(111) in an Argon Plasma at Different Pressures
Surface and Interface Analysis 27(1999) 881-888

Deenapanray P, Meyer W, Auret F
Electic-Field-Enhanced Emission and Annealing Behaviour of Electron Traps Introduced in n-Si by Low-Energy He Ion Bombardment
Semiconductor Science and Technology 14(1999) 41-47

Dowd A, Elliman R, Samoc M, Luther-Davies B
Nonlinear Optical Response of Ge Nanocrystals in a Silica Matrix
Applied Physics Letters 74, 2(1999) 239-241

Dowd A, Samoc M, Luther-Davies B, Elliman R
Nonlinear Optical Properties of Semiconducting Nanocrystal in Fused Silica
Nuclear Instruments and Methods in Physics Research: Section B B148(1999) 964-968

Fatima S, Jagadish C, Lalita J, Svensson B, Hallen A
Hydrogen Interaction with Implantation Induced Point Defects in p-type Silicon
Journal of Applied Physics 85, 5(1999) 2562-2567

Fatima S, Wong-Leung J, Fitzgerald J, Jagadish C
Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si
Applied Physics Letters 74(1999) 1141-1143

Fletcher N
Materials for Musical Instruments
Acoustics Australia 27(1999) 5-9

Fletcher N
The Nonlinear Physics of Musical Instruments
Reports on Progress in Physics 62(1999) 723-764

Fletcher N, Tarnopolsky A
Acoustics of the Avian Vocal Tract
The Journal of the Acoustical Society of America 105(1999) 35-49

Fletcher N, Tarnopolsky A
Blowing Pressure, Power and Spectrum in Trumpet Playing
The Journal of the Acoustical Society of America 105(1999) 874-881

Fu L, Tan H, Johnston M, Gal M, Jagadish C
Proton irradiation induced intermixing in InGaAs /(Al)GaAs quantum wells and quantum well lasers
Journal of Applied Physics 85(1999) 6786-6789

Fu Y, Willander M, Liu Q, Lu W, Shen H, Tan H, Yuan S, Jagadish C
Energy Sublevels in an Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As Quantum Wire
Superlattices and Microstructures 26, 5(1999) 307-315

Gerondakis S, Kubica J, Zamora M, Reeves G, Ridgway M, Johnson C
Refractive indices and thickness of optical waveguides fabricated by Si ion implantation into silica glass
Thin Solid Films 340(1999) 233-236

Glasko J, Elliman R, Zou J, Cockayne D, Fitzgerald J
Defects Formed During 1 MeV Si Ion-Irradiation of GeSi/Si Strained Layer Heterostructures at Elevated Temperature
Nuclear Instruments and Methods in Physics Research: Section B B148(1999) 206-210

Glover C, Ridgway M, Yu K, Foran G, Lee T, Moon Y, Yoon E
Structural Characterization of Amorphized InP: Evidence for Chemical Disorder
Applied Physics Letters 74, 12(1999) 1713-1715

Glover C, Yu K, Ridgway M, Foran G
Characterisation of ion-implantation-induced disorder in GaAs by EXAFS
Japanese Journal of Applied Physics 38, 38-1(1999) 548-551

Goldberg R, Williams J, Elliman R
Preferential Amorphization at Extended Defects of Self-Ion-Irradiated-Silicon
Physical Review Letters 82, 4(1999) 771-774

Goodman S, Auret F, Ridgway M, Myburg G
Proton irradiation of n-type GaAs
Nuclear Instruments and Methods in Physics Research: Section B B148(1999) 446-449

Gurarie V, Jamieson D, Orlov A, Williams J, Conway M
Thermal Fatigue of Ion Implanted Magnesium Oxide Crystals
Nuclear Instruments and Methods in Physics Research: Section B 148(1999) 773-777

Hoffman A, Petravic M, Comtet G, Heurtel A, Hellner L, Dujardin G
Photon-stimulated desorption of H+ and H- ions from diamond surfaces: Evidence for direct and indirect processes
Physical Review B 59(1999) 3203-3209

Holt S, Brown A, Yuan S
An X-ray reflectivity study of the influence of anodic oxidation and annealing on interface structure in quantum well devices
Colloids and Surfaces A: Physicochemical and Engineering Aspects 155(1999) 85?91

Iordache G, Buda M, Acket G, van de Roer T, Kaufmann L, Karouta F, Jagadish C, Tan H
Continuous wave operation of low confinement asymmetric structure diode lasers
Electronics Letters 35(1999) 148-149

Johnston M, Gal M, Chen Z, Liu Q, Li N, Lu W, Shen H, Fu L, Tan H, Jagadish C, Li N
Interdiffused quantum well infrared photodetector tuning for colour sensitive arrays
Applied Physics Letters 75(1999) 923-925

Karouta F, Tan H, Jagadish C, van Roy B
Vertical Integration of Dual Wavelength Index Guided GaAs-Lasers
Electronics Letters 35(1999) 815-817

Kerr-Menz A, Welham N
Low Temperature Mechanochemical Formation of Titanium Carbonitride
Nanostructured Materials 11, 2(1999) 233-239

Kinomura A, Chayahara A, Tsubouchi N, Horino Y, Williams J
Activation Energies for Light Ions in Ion Beam Induced Epitaxial Crystallization
Nuclear Instruments and Methods in Physics Research: Section B 148(1999) 370-374

Kinomura A, Williams J, Fujii K
Mass Effects on Regrowth Rates and Activation Energies of Solid-Phase Epitaxy Induced by Ion Beams in Silicon
Physical Review B 59, 23(1999) 15 214-15 224

Leech P, Ridgway M
Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3
Nuclear Instruments and Methods in Physics Research: Section B B159(1999) 187-190

Leon R, Okuno J, Lawton R, Stevens-Kalceff M, Phillips M, Zou J, Cockayne D, Lobo C
Dislocation-induced changes in quantum dots: step alignment and radiative emission
Applied Physics Letters 74(1999) 2301-2304

Li N, Lu W, Liu Q, Yuan S, Li Z, Dou H, Shen H, Li N
Proton Implantation and Rapid Thermal Annealing Effects on GaAs/A1GaAs Quantum Well Infrared Photodetectors
Superlattices and Microstructures 26, 5(1999) 317-324

Li Z, Williams J, Llewellyn D, Giersig M
Mechanochemical Reaction and Formation of an Amorphous Nitride Phase During Ball Milling of Si in NH3
Applied Physics Letters 75, 20(1999) 3111-3113

Li Z, Wong-Leung J, Deenapanray P, Conway M, Chivers D, Fitzgerald J, Williams J
The Role of Fe on the Crystallisation of a-Si3N4 from Amorphous Si-N Formed by Ion Implantation
Nuclear Instruments and Methods in Physics Research: Section B 148(1999) 534-539

Liao X, Zou J, Cockayne D, Leon R, Lobo C
Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots
Physical Review Letters 82, 25(1999) 5148-5151

Liu Q, Chen X, Lu W, Xu W, Yuan X, Li N, Shen H, Yuan S, Tan H, Jagadish C, Li N
Wavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by thermal interdiffusion
Japanese Journal of Applied Physics 38(1999) 5044-5045

Liu Q, Lu W, Li Z, Chen Y, Shen H, Fu Y, Willander M, Tan H, Yuan S, Jagadish C, Zou J, Cockayne D
Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing
Applied Physics Letters 75(1999) 3339-3341

Lobo C, Leon R, Marcinkevicius S, Yang W, Sercel P, Liao X, Zou J, Cockayne D
Inhibited carrier transfer in ensembles of isolated quantum dots
Physical Review B 60, 24(1999) 16 647 - 16 651

Mamor M, Auret F, Goodman S, Brink J, Hayes M, Meyer F, Vantomme A, Langouche G, Deenapanray P
Deep Level Properties of Erbium Implanted Epitaxially Grown SiGe
Nuclear Instruments and Methods in Physics Research: Section B 148(1999) 523-527

Manasreh M, Ballet P, Smathers J, Salamo G, Jagadish C
Proton irradiation effects on the inter sub-band transitions in GaAs/AlGaAs multiple quantum wells with bulk and superlattice barriers
Applied Physics Letters 75(1999) 525-527

McCallum J
The Kinetics of Dopant-Enhanced Solid Phase Epitaxy in H-Free Amorphous Silicon Layers
Nuclear Instruments and Methods in Physics Research: Section B B148(1999) 350-354

McCallum J, Morpeth L
Synthesis of Ti: Sapphire by Ion Implantation
Nuclear Instruments and Methods in Physics Research: Section B B148(1999) 726-729

Ophel T, Timmers H, Elliman R
Non-Linearities and Entrance Window Effects in Large Solid-Angle Gas Ionization Detectors
Nuclear Instruments and Methods in Physics Research: Section A 423(1999) 381-393

Ophel T, Timmers H, Elliman R
Window Effects in a Large Solid Angle, Position-Sensitive Gas Ionisation Detector for Elastic Recoil Detection Analysis (ERDA)
Nuclear Instruments and Methods in Physics Research: Section A A423(1999) 381-393

Papanicolaou N, Rao M, Molnar B, Tucker J, Edwards A, Holland O, Ridgway M
Ion implantation of SiC and GaN
Nuclear Instruments and Methods in Physics Research: Section B B148(1999) 416-420

Rao M, Berry A, Do T, Ridgway M, Chi P
S and Si ion implantation in GaSb grown on GaAs
Journal of Applied Physics 86(1999) 6068-6071

Rao M, Tucker J, Ridgway M, Holland O, Mittereder J
Ion implantation in bulk semi-insulating 4H-SiC
Journal of Applied Physics 86(1999) 752-758

Ridgway M, Glover C, Bezakova E, Byrne A, Foran G, Yu K
Atomic-level characterisation of ion-induced amorphisation in compound semiconductors
Nuclear Instruments and Methods in Physics Research: Section B B148(1999) 391-395

Ridgway M, Glover C, Foran G, Yu K
Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements
Nuclear Instruments and Methods in Physics Research: Section B 147(1999) 148-154

Ridgway M, Glover C, Yu K, Foran G, Clerc C, Hansen J, Nylandsted-Larsen A
Composition-dependent bondlengths in crystalline and amorphous GexSi1-x alloys
Physical Review B 60(1999) 10831-10836

Rode A, Hyde S, Gamaly E, Elliman R, McKenzie D, Bulcock S
Structural analysis of a carbon foam formed by high pulse-rate laser ablation
Applied Physics A: Materials Science and Processing 69 Supplement(1999) S755 - S758

Schmidt M, Kaczmarek W
Synthesis of SrFeO2.5 from Mechanically Activated Reactants
Journal of Alloys and Compounds 283(1999) 117-121

Shan W, Yu K, Walukiewicz W, Ager J, Haller E, Ridgway M
Reduction of Band-Gap Energy in GaNAs and AlGaNAs Synthesized by N+ Implantation
Applied Physics Letters 75, 10(1999) 1410-1412

Tan H, Jagadish C, Lederer M, Luther-Davies B, Zou J, Cockayne D, Haiml M, Siegner U, Keller U
Role of Implantation-Induced Defects on the Response Time of Semiconductor Saturable Absorbers
Applied Physics Letters 75, 10(1999) 1437-1439

Tarnopolskaya T, de Hoog F, Fletcher N
Low-Frequency Mode Transition in the Free In-Plane Vibration of Curved Beams
Journal of Sound and Vibration 228(1999) 69-90

Tarnopolskaya T, de Hoog F, Tarnopolsky A, Fletcher N
Vibration of Beams and Helices with Arbitrarily Large Uniform Curvature
Journal of Sound and Vibration 228(1999) 305-332

Timmers H, Ophel T, Elliman R
Improved designs of gas ionization detectors used for elastic recoil detection
Nuclear Instruments and Methods in Physics Research: Section B B 156(1999) 236-243

Welham N
Ambient Temperature Formation of (Ta, Nb)C and (Ta, Nb)N
Journal of Materials Science 34(1999) 21-27

Welham N
Room Temperature Reduction of Scheelite (CaWO4)
Journal of Materials Research 14, 2(1999) 619-627

Welham N
Non-Thermal Production of Tungsten from Scheelite
Materials Science and Technology 15(1999) 456-458

Welham N
Multicarbide Formation Direct from Concentrate
Journal of Materials Science Letters 18(1999) 141-143

Welham N, Kerr T
Ambient-Temperature Mechanochemical Formation of Titanium Nitride-Alumina Composites from TiO2 and FeTiO3
Journal of the American Ceramic Society 82, 9(1999) 2332-2336

Williams J, Chen Y, Wong-Leung J, Kerr-Menz A, Swain M
Ultra-Micro-Indentation of Silicon and Compound Semiconductors with Spherical Indenters
Journal of Materials Research 14, 6(1999) 2338-2343

Williams J, Conway M, Wong-Leung J, Deenapanray P, Petravic M, Brown R, Eaglesham D, Jacobson D
The Role of Oxygen on the Stability of Gettering of Metals to Cavities in Silicon
Applied Physics Letters 75, 16(1999) 2424-2426

Willis P, Fitzgerald J, Williams J
Mechanochemical synthesis of boron nitride nanotubes
Materials Science Forum (1999) 173-178

Wong-Leung J, Williams J, Kinomura A, Nakano Y, Hayashi Y, Eaglesham D
Diffusion and Transient Trapping of Metals in Silicon
Physical Review B 59, 11(1999) 7990-7998

Yu K, Shan W, Glover C, Ridgway M, Wong W, Yang W
Local structures of free-standing AlGaN thin films studied by extended x-ray absorption fine structure
Applied Physics Letters 75(1999) 4097-4099

Yu K, Walukiewicz W, Muto S, Jin H, Abelson J, Clerc C, Glover C, Ridgway M
Local structures of Ga atoms in Amorphous Silicon and Hydrogenated Amorphous Silicon Before and After Synchrotron X-ray Irradiation
Applied Physics Letters 75, 21(1999) 3282-3284

Zhao Q, Willander M, Holtz P, Lu W, Dou H, Shen H, Li G, Jagadish C
Radiative recombination in p-type delta doped layers in GaAs
Physical Review B 60(1999) R2193-R2196

Zhu X, Williams J, McCallum J
Structural Changes in Ultra-High-Dose Self-Implanted Crystalline and Amorphous Silicon
Nuclear Instruments and Methods in Physics Research: Section B 148(1999) 268-272

Zhu X, Williams J, Llewellyn D, McCallum J
Instability of Nanocavities in Amorphous Silicon
Applied Physics Letters 74, 16(1999) 2313-2315

Zhu X, Zhang H, Williams J, Wang R, Zhang L, Wu X
Low-Temperature Thermopower in Nanostructured Silver
Applied Physics Letters 75, 1(1999) 136-138

Deenapanray P, Ridgway M
An XPS and glancing angle RBS investigation of metallic impurity contamination of magnetron sputter etched Si
Journal of Environmental Chemical Engineering , 291 SUPPL.2(1999) 365-367

Deenapanray P, Williams J
A dlts investigation of the effect of ion mass, fluence and energy on the introduction of a higher-order vacancy cluster in noble gas ion bombarded n-Si
Materials Research Society Symposium Proceedings 540(1999) 121-126

Deenapanray P, Tan H, Jagadish C
Impurity-free interdiffusion in GaAs/Al 0.54Ga 0.46As multiple quantum wells capped with PECVD SiO x: Effect of nitrous oxide flow
Griffith Asia Quarterly (1999) 361-364

Deenapanray P, Tan H, Petravic M, Williams J, Jagadish C
Characterization of low-temperature PECVD silicon dioxide films
Materials Research Society Symposium Proceedings 555(1999) 197-202

Dou H, Jagadish C
Photoluminescence of Si d-doped InGaAs/GaAs heterostructures with double beam excitation
Griffith Asia Quarterly (1999) 516-518

Dou H, Jagadish C
Photomodulation spectroscopy of Zn d-doped GaAs
Griffith Asia Quarterly (1999) 519-521

Dou H, Jagadish C
Photoluminescence of selectively Si d-doped In0.2Ga0.8As heterostructure at 77K
Journal of Environmental Chemical Engineering 20, 7(1999) 573-577

Dou H, Jagadish C
Photoluminescence of InGaAs/GaAs with double lights
Journal of Environmental Chemical Engineering 20, 8(1999) 656-661

Dou H, Li G, Jagadish C
Radiative recombination in p-type d-doped layers in GaAs
Physical Review B 60, 4(1999) R2193-R2196

Elliman R
Characterization of thin films using heavy ion beams
Bulletin of Materials Science 22, 3(1999) 601-606

Fatima S, Jagadish C, Wong-Leung J
Comparative study of the electrical and structural characterization of the sub-threshold damage in n- and p-type Si implanted with MeV ions
Griffith Asia Quarterly (1999) 505-508

Fletcher N
Acoustics of the avian vocal tract
The Journal of the Acoustical Society of America 105, 1(1999) 35-49

Fu L, Tan H, Jagadish C
Interdiffused quantum-well infrared photodetectors for color sensitive arrays
Applied Physics Letters 75, 7(1999) 923-925

Fu L, Tan H, Jagadish C
Quantum well intermixing in InGaAs/(Al)GaAs by As and H irradiation
Griffith Asia Quarterly (1999) 355-357

Fu L, Tan H, Jagadish C, Gal M
Possibility of enhanced frequency response of intermixed InGaAs/GaAs and InGaAs/AlGaAs quantum well devices
Griffith Asia Quarterly (1999) 352-354

Glasko J, Elliman R, Fitzgerald J
Ion irradiation of GeSi/Si strained-layer heterostructures
Materials Research Society Symposium Proceedings 540(1999) 55-65

Jagadish C
Selective intermixing of ion irradiated semiconductor heterostructures
Materials Research Society Symposium Proceedings 540(1999) 15-26

Jagadish C
Changes in interdiffusion associated with thermally oxidized GaAs
Griffith Asia Quarterly (1999) 218-221

Jagadish C
Proton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriers
Applied Physics Letters 75, 4(1999) 525-527

Jagadish C
Scanning ion deep level transient spectroscopy
Nuclear Instruments and Methods in Physics Research: Section B 158, 1(1999) 464-469

Jagadish C, Fu L
Inter-facet noise correlation measurement as a diagnostic tool for semiconductor laser studies
Griffith Asia Quarterly (1999) 236-239

Jagadish C, Gal M
Observation of state filling effects in the carrier dynamics of self-assembled quantum dots
Griffith Asia Quarterly (1999) 344-347

Karouta F
High etch rate and smooth morphology using a novel chemistry in reactive ion etching of GaN
Electrochemical and Solid-State Letters 2, 5(1999) 240-241

Karouta F
Progress in Reactive Ion Etching of epitaxial GaN
Journal of Environmental Chemical Engineering (1999) 171-174

Karouta F
Sealing Method of Dry-Etched AlAs/GaAs Top Mirrors in Vertical Cavity Surface Emitting Lasers
Electrochemical and Solid-State Letters 2, 2(1999) 83-85

Karouta F
Growth of high quality, MOCVD grown Ga-polar GaN layers on GaN substrates after novel reactive ion etching
Physica Status Solidi (A) Applied Research 176, 1(1999) 573-577

Karouta F
Chemical and complementary role of fluorine in a chlorine-based reactive ion etching of GaN
Physica Status Solidi (A) Applied Research 176, 1(1999) 755-758

Karouta F
Final polishing of Ga-polar GaN substrates using reactive ion etching
Journal of Electronic Materials 28, 12(1999) 1448-1451

Karouta F, Danckaert J, Thienpont H
Asymmetric current injection for polarization stabilization in vertical-cavity surface-emitting lasers
Journal of Environmental Chemical Engineering (1999) 47-48

Karouta F, Jagadish C, Tan H
High power CW output from low confinement asymmetric structure diode laser
Electronics Letters 35, 2(1999) 148-149

Lederer M, Luther-Davies B, Tan H, Jagadish C
Ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers
Griffith Asia Quarterly (1999) 105-108

Lederer M, Luther-Davies B, Tan H, Jagadish C
Nonlinear optical properties of ion-implanted GaAs
Griffith Asia Quarterly (1999) 151-153

Lobo C
Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots
Thin Solid Films 357, 1(1999) 40-45

Lobo C, Jagadish C
Optical properties of self-organized InGaAs/GaAs quantum dots in field-effect structures
Materials Research Society Symposium Proceedings 536(1999) 269-274

Ridgway M
Composition-dependent bond lengths in crystalline and amorphized GexSi1-x alloys
Physical Review B 60, 15(1999) 10831-10836

Ridgway M
Implant isolation study of In0.53Ga0.47As
Griffith Asia Quarterly (1999) 29-32

Ridgway M, Leech P
Enhancement of the etch rate of LiNbO3 by prior bombardment with MeV O2+ ions
Journal of Vacuum Science and Technology A 17, 6(1999) 3358-3361

Rodriguez M
Large streamer chamber muon tracking detector in a high-flux fixed-target application
Nuclear Instruments and Methods in Physics Research: Section A 435, 3(1999) 354-374

Rodriguez M
Spin asymmetries A1 of the proton and the deuteron in the low x and low Q2 region from polarized high energy muon scattering
Physical Review D 60, 7(1999) 1-Sep

Smith L, Lee S
Quantum dot exciton dynamics through a nanoaperture: Evidence for two confined states
Physical Review Letters 83, 14(1999) 2797-2800

Tan H, Jagadish C
Intermixing induced resonance shift in GaAs/Al xO y DBR resonators
Griffith Asia Quarterly (1999) 365-368

Tan H, Jagadish C
Fabrication and characterization of delta-doped In 0.2Ga 0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy
Griffith Asia Quarterly (1999) 140-143

Tan H, Fu L, Jagadish C
Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence
Griffith Asia Quarterly (1999) 187-190

Tan H, Jagadish C, Gal M
Comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy
Griffith Asia Quarterly (1999) 348-351

Tan H, Yuan S, Jagadish C, Lu W
Application of selective implantation induced intermixing on V-grooved AlGaAs/GaAs coupled quantum wire
Griffith Asia Quarterly (1999) 513-515

Welham N, Williams J
Carbothermic reduction of llmenite (FeTiO3) and rutile (TiO2)
Metallurgical and Materials Transactions B 30, 6(1999) 1075-1082

Williams J
Instability of nanocavities in disordered and amorphous silicon under ion irradiation
Materials Research Society Symposium Proceedings 540(1999) 127-132

Williams J, Conway M
Thermal stress resistance of ion implanted sapphire crystals
Nuclear Instruments and Methods in Physics Research: Section B 147, 1-Apr(1999) 221-225

Williams J, Conway M
Thermal fatigue of ion implanted magnesium oxide crystals
Nuclear Instruments and Methods in Physics Research: Section B 148, 1-Apr(1999) 773-777

Yuan S, Jagadish C, Zou J
TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells
Griffith Asia Quarterly (1999) 358-360

Yuan S, Tan H, Jagadish C, Lu W, Yuan X
Tuning of detection wavelength of GaAs/AlGaAs quantum-well IR photo-detectors by thermal interdiffusion
Griffith Asia Quarterly (1999) 128-130

(134 publications)

Conference paper

Rode A, Gamaly E, Elliman R, Kheifets A, Luther-Davies B
Cluster-assembled amorphous carbon nano-foam synthesised by high-pulse-rate laser ablation
International Winterschool/Euroconference on Electronic Properties of Novel Materials ?, ?(1999) 512

(1 publications)

Journal article (non-refereed)

Chen Y, Fitzgerald J, Chadderton L, Chaffron L
Investigation of nanoporous carbon powders produced by high energy ball milling and formation of carbon nanotubes during subsequent annealing
Journal of Metastable and Nanocrystalline Materials 2-6(1999) 375-380

Foran G, Yu K, Glover C, Ridgway M, Bezakova E, Byrne A
Atomic-level characterisation of ion-induced amorphisation in compound semiconductors
Nuclear Instruments and Methods in Physics Research: Section B 148(1999) 391-395

Jar P, Williams J
Investigation of Combustion Reactions under Different Milling Conditions
Journal of Metastable and Nanocrystalline Materials 2-6(1999) 79-84

(3 publications)